Revisiting the Parallel Strategy for DOACROSS Loops

Journal of Computer Science and Technology - DOACROSS loops are significant parts in many important scientific and engineering applications, which are generally exploited pipeline/wave-front...     

Low-temperature synthesis of SiC nanowires with Ni catalyst

SiC nano wires were fabricated on the silicon substrate dipped with a layer of Ni catalyst at 900 ℃ by gas pressure annealing processing. The morphologies and crystal structures were determined by scanning electron microscopy(SEM), transmission electron microscopy(TEM)and X-ray diffraction(XRD). The results show that the assynthesized nanowires are β-SiC single crystalline with diameter range of 50-100 nm, and length of tens of micron by directly annealing at 900 ℃. The SiC nano wires grow along the [111] direction with highly uniform morphology. And the possible growth mechanism of SiC nano wires is proposed.The present work provides an efficient strategy for the production of high-quality SiC nano wires.     

Fabrication and characterizations of Cr3+-doped ZnGa2O4 transparent ceramics with persistent luminescence

0.5 at.% Cr:ZnGa₂O₄ precursor was synthesized by the co-precipitation method with nitrates as raw materials, using ammonium carbonate as the precipitant. Low-agglomerated Cr:ZnGa₂O₄ powders with an average particle size of 43 nm were obtained by calcining the precursor at 900℃ for 4 h. Using the powders as starting materials, 0.5 at.% Cr:ZnGa₂O₄ ceramics with an average grain size of about 515 nm were prepared by presintering at 1150℃ for 5 h in air and HIP post-treatment at 1100℃ for 3 h under 200 MPa Ar. The in-line transmittance of 0.5 at.% Cr:ZnGa₂O₄ ceramics with a thickness of 1.3 mm reaches 59.5% at the wavelength of 700 nm. The Cr:ZnGa₂O₄ ceramics can be effectively excited by visible light and produce persistent luminescence at 700 nm. For Cr:ZnGa₂O₄ transparent ceramics, the brightness of afterglow was larger than 0.32 mcd/m² after 30 min, which is far superior to that of Cr:ZnGa₂O₄ persistent luminescence powders.     

30Cr13不锈钢冶炼过程夹杂物控制技术

  针对30Cr13生产过程中存在的轧材非金属夹杂物合格率偏低仅85%左右的问题，通过对30Cr13不锈钢精炼过程钢中非金属夹杂物存在形态进行分析，并结合现有精炼工艺制度，在实验室研究的基础上制定了不锈钢精炼过程非金属夹杂物控制方案。工业应用后，精炼结束钢中大于5 μm的非金属夹杂物总数、形状以及尺寸等参数均得到了有效改善，钢水洁净度大大提高。     

基于粒子群优化和支持向量机的花粉浓度预测模型

为了提高花粉浓度预报的准确率，解决现有花粉浓度预报准确率不高的问题，提出了一种基于粒子群优化（PSO）算法和支持向量机（SVM）的花粉浓度预报模型。首先，综合考虑气温、气温日较差、相对湿度、降水量、风力、日照时数等多种气象要素，选择与花粉浓度相关性较强的气象要素构成特征向量；其次，利用特征向量与花粉浓度数据建立SVM预测模型，并使用PSO算法找出最优参数；然后利用最优参数优化花粉浓度预测模型；最后，使用优化后的模型对花粉未来24 h浓度进行预测，并与未优化的SVM、多元线性回归法（MLR）、反向神经网络（BPNN）作对比。此外使用优化后的模型对某市南郊观象台和密云两个站点进行逐日花粉浓度预测。实验结果表明，相比其他预报方法，所提方法能有效提高花粉浓度未来24 h预测精度，并具有较高的泛化能力。     

Closure of Internal Porosity in Continuous Casting Bloom During Heavy Reduction Process

Metallurgical and Materials Transactions B - To investigate the closure behavior of internal porosity (also referred to as internal void) in continuous casting bloom during heavy reduction (HR) and...     

Deep Integration of Innovation and Entrepreneurship (InE) Education in Chinese University Classrooms

Recently, InE has been regarded as a popular education strategy in Chinese universities. However, problems have been exposed in the adoption of InE, for example, in InE courses and competitions. The purpose of this paper is to provide a possible solution to the problems, which is to organize effective InE courses by integrating InE with Inter-Course-level Problem-Based Learning (ICPBL). A detailed case is demonstrated by an ICPBL elective course design with deep integration of InE in the teaching, learning, and assessments. This paper contributes to a new curriculum design for promoting InE education in practically for Chinese universities.     

Structural health analysis on cyber physical system based on reliability

The Journal of Supercomputing - Cyber physical system (CPS) is consisting of two interdependent networks, i.e., a cyber network embedding into a physical network. Although interdependence makes the...